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Oxidation of Au/Si Films For Self-Confined Interconnects

Published online by Cambridge University Press:  22 February 2011

C. A. Hewett ,
D. M. Scott ,
S. S. Lau  and
M. Bartur
C. A. Hewett
Affiliation:
Department of Electrical Engineering and Computer Sciences, Mail Code C-014 University of California, San Diego, La Jolla, CA 92093
D. M. Scott
Affiliation:
Department of Electrical Engineering and Computer Sciences, Mail Code C-014 University of California, San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, Mail Code C-014 University of California, San Diego, La Jolla, CA 92093
M. Bartur
Affiliation:
Caltech, Pasadena, CA 91125
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Abstract

We have explored the possibility of oxidizing a Au/Si composite layer or a Au-Si alloyed layer on SiO2 substrates to form a highly conductive narrow line with a protective SiO2 layer over it. A number of sample configurations and annealing ambients have been investigated. It was found that co-evaporated Au-Si alloys ( ∼30 at. % Au) showed no oxide formation for annealing temperatures between 200°C and 800°C in a flowing O2 ambient (annealing time ≃ 2.25hrs). Samples with a configuration of SiO2/Au/Si showed mixing of the Au and Si layers, but no appreciable oxide formation until after annealing at 800°C in a flowing O2. Samples with a configuration of SiO2/Si/Au, however, showed uniform and smooth oxide growth on top of the Au layer after annealing in air at 200°C. The structural and electrical properties of the self-confined Au lines will be discussed. This process may be potentially useful for narrow interconnects on VLSl chips.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 40: Symposium J – Electronic Packaging Materials Science I , 1984 , 329
Copyright
Copyright © Materials Research Society 1985

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References

1. Murarka, S. P., Silicides for VLSI Applications, Academic Press, San Diego, 1983, pp. 1.–24.Google Scholar
2. Bartur, M. and Nicolet, M.-A., IEEE Elect. Dev. Lett., Vol. EDL-5, No. 3, p. 88.CrossRefGoogle Scholar
3. Bartur, M. and Nicolet, M.-A., Appl. Phys. Lett. 44 (2), p. 263.Google Scholar
4. Hiraki, A., Lugujjo, E. and Mayer, J. W., J. Appl.Phys. 43(9), p. 3643.CrossRefGoogle Scholar
5. CRC Handbook of Chemistry and Physics, 46th edition.Google Scholar
6. Nicolet, M.-A. and Lau, S. S., “Formation and Characterization of Transition-Metal Silicides” from VLSI Electronics Microstructure Science, vol.6, Einspruch, N. G. and Larrabee, G. B., eds., Academic Press, San Diego, 1983, p. 397.Google Scholar