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Published online by Cambridge University Press: 22 February 2011
Kinetic data are provided for oxidation of Ge+-ion implanted Si over a range of temperature and oxidation ambient. Oxidation rates were enhanced in implanted Si and, over most of the range studied, found to be consistent with a modified reaction at the oxide/Si interface. However, this reaction is shown to be more complex than in virgin Si and could not be represented by a single activation energy. An anomalous behavior is exhibited at low-temperature for steam oxidation. This behavior is characterized and the mechanisms which are responsible are discussed.