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Oxidation Kinetics of Ge+-Ion Implanted Si

Published online by Cambridge University Press:  22 February 2011

O. W. Holland ,
C. W. White  and
D. Fathy
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. Fathy
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Kinetic data are provided for oxidation of Ge+-ion implanted Si over a range of temperature and oxidation ambient. Oxidation rates were enhanced in implanted Si and, over most of the range studied, found to be consistent with a modified reaction at the oxide/Si interface. However, this reaction is shown to be more complex than in virgin Si and could not be represented by a single activation energy. An anomalous behavior is exhibited at low-temperature for steam oxidation. This behavior is characterized and the mechanisms which are responsible are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 271
Copyright
Copyright © Materials Research Society 1988

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References

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