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Orowan-Based Deformation Model for Layered Metallic Materials

Published online by Cambridge University Press:  10 February 2011

Eric R. Kreidler
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, 116 W. 19th Ave., Columbus, OH 43210-1179
Peter M. Anderson
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, 116 W. 19th Ave., Columbus, OH 43210-1179
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Abstract

An Orowan-based deformation model for layered metallic materials is presented and used to calculate the stress-strain behavior for two deformation modes. This model assumes that layer thicknesses are sufficiently small so that single rather than multiple dislocation pileups form. Deformation then proceeds by increasing the density of single dislocation pileups. Furthermore, it is assumed that the controlling stress for plastic deformation is that to propagate a tunneling dislocation loop inside an embedded elastic-plastic layer. Initially, the resolved stress required to propagate an isolated tunneling loop does not depend on whether the loop shears the layer perpendicular to an interface or stretches it parallel to an interface. At larger strains, the tunneling arrays become sufficiently dense such that local dislocation interaction changes the line energy of a tunneling dislocation. As a result, the elastic-plastic layers may exhibit modest softening when sheared or substantial hardening when stretched. When the elastic-plastic layers are embedded into a multilayered specimen with alternating elastic-only layers, no macroscopic strain softening is observed. However, the predicted macroscopic stress-strain curves for stretching and shearing are significantly different in their dependence on layer thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. Lehoczky, S.L., J. Appl. Phys. 49 (1978).Google Scholar
2. Yoshii, K., Takagi, K., Umeno, M., and Kawabe, H., Metall. Trans.A. 15A, 1273 (1984).Google Scholar
3. Menezes, S. and Anderson, D.P., J. Electrochem. Soc. 137 (2), 440 (1990).Google Scholar
4. Helmersson, U., Todorova, S., Barnett, S. A., and Sundgren, J.E., J. Appl. Phys. 62 (2), 481 (1987).Google Scholar
5. Barnett, S.A. and Shinn, M., Annu. Rev. Mater. Sci. 24, 481 (1994).Google Scholar
6. Rao, S.I., Hazzledine, P.M. and Dimiduk, D.M., Mat. Res. Soc. Symp. Proc. 362, 67 (1995).Google Scholar
7. Chu, X. and Barnett, S.A., J. Appl. Phys. 77, 4403 (1995).Google Scholar
8. Anderson, P.M. and Li, C., Nanos. Mater. 5 (3), 349 (1995).Google Scholar
9. Embury, J.D. and Hirth, J.P., Acta. Metal]. Mater. 42, 2051 (1994).Google Scholar
10. Hirth, J.P. and Lothe, J., Theory of Dislocations, 2nd Edn., Wiley, New York (1982) pp. 733–34.Google Scholar