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Origin of Photodegradation in a-Si:H - Bond Breaking or Charge Trapplng?

Published online by Cambridge University Press:  15 February 2011

Tatsuo Shimizu ,
Minoru Kumeda ,
Qing Zhang ,
Jinyan Zhang  and
Toshihiro Ohtsuka
Tatsuo Shimizu
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Qing Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Jinyan Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Toshihiro Ohtsuka
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
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Abstract

In order to clarify the microscopic origin of the photodegradation in a-Si:II, two kinds of approaches have been done. One approach is to carry out the light soaking both at room temperature (RT) and 77 K to cause the photodegradation and to investigate the recovery by thermal annealing. The other approach is to investigate the light-induced ESR in hydrogenated amorphous silicon-nitrogen alloys (a-Si1-xNx:H) and to see the x-dependence down to x = 0. From the first approach, it is found that there is a very broad continuous distribution of annealing activation energies from a few eV through 1.4 eV. It appears less likely that such a wide distribution of annealing activation energy is related with the bond-breaking model. On the other hand, it is found from the second approach that there exist two distinct origins for the light-induced spins, the fast process and the slow process, which are likely to be the carrier capture and the bond breaking, respectively. From the continuation of the observed behavior to a-Si:H, that is, x = 0 in a-Si1-xNx:H, the RT photodegradation in a-Si:H appears to be the bond breaking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 239
Copyright
Copyright © Materials Research Society 1995

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References

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