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Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

Published online by Cambridge University Press:  25 February 2011

I. Hashim ,
B. Park  and
H. A. Atwater
I. Hashim
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
B. Park
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
H. A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
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Abstract

Epitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 327
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Li, J., Shacham-Diamand, Y. and Mayer, J.W., Mater. Sci. Rep. 9, 1 (1992).CrossRefGoogle Scholar
[2] Parkin, S.S.P., Appl. Phys. Lett. 60, 512 (1992).CrossRefGoogle Scholar
[3] Hashim, I., Park, B. and Atwater, H.A., unpublished.Google Scholar
[4] Chang, C.A., Appl. Phys. Lett. 55, 2754 (1989).CrossRefGoogle Scholar
[5] Li, J. and Shacham-Diamand, Y., J. Electrochem. Soc. 139, L37 (1992).CrossRefGoogle Scholar
[6] Tonner, B.P., Zhang, J., Chen, X., Han, Z-L., Harp, G.R. and Saldin, D.K., J. Vac. Sci. Technol. B10, 2082 (1992).CrossRefGoogle Scholar
[7] Walker, F.J., Specht, E.D., and McKee, R.A., Phys. Rev. Lett. 67, 2818 (1991).CrossRefGoogle Scholar
[8] Walker, F.J., Conner, J.R., and McKee, R.A., Mat. Res. Soc. Symp. Proc. 187, 249 (1990).CrossRefGoogle Scholar
[9] Hong, S.Q., Comrie, C.M., Russell, S.W. and Mayer, J.W., J. Appl. Phys. 70 3655 (1991).CrossRefGoogle Scholar
[10] Schaefer, J.A., Physica B170, 45 (1991).CrossRefGoogle Scholar
[11] Fox, B.A. and Jesser, W.A., J. Appl. Phys. 68, 2739 (1990).CrossRefGoogle Scholar