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Orientation Dependence Of Surface Passivation For Semi-Insulating Gaas

Published online by Cambridge University Press:  10 February 2011

I.P. Koutzarov ,
C.H. Edirisinghe ,
H.E. Ruda ,
L.Z. Jedral ,
Q. Liu ,
J. Guo-Ping ,
H. Xia ,
W. N. Lennard  and
L. Rodriguez-Fernandez
I.P. Koutzarov
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 3E4
C.H. Edirisinghe
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 3E4 Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 3E4
H.E. Ruda
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 3E4 Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 3E4
L.Z. Jedral
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 3E4
Q. Liu
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 3E4
J. Guo-Ping
Affiliation:
Electronic Materials Group, Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 3E4
H. Xia
Affiliation:
Department of Physics and Interface Science Western, The University of Western Ontario, London, Ontario, Canada N6A 3K7
W. N. Lennard
Affiliation:
Department of Physics and Interface Science Western, The University of Western Ontario, London, Ontario, Canada N6A 3K7
L. Rodriguez-Fernandez
Affiliation:
Department of Physics and Interface Science Western, The University of Western Ontario, London, Ontario, Canada N6A 3K7
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Abstract

We report on the orientation dependence ((100), (110) and (111) ) of photoluminescence (PL), photoreflectance (PR) and Surface Photo-Voltage (SPV) for sulfur passivated bulk semiinsulating (SI) GaAs. Near band gap PL peak intensities (bound-exciton and acceptor-related) were enhanced following (NH4)2S or S2Cl2 treatment of GaAs for all orientations. The reduction of surface recombination velocity (from PL data) was orientation dependent and especially pronounced for the case of (111)A and (111)B orientations. The effect of thin dielectric layers deposited on S-treated surfaces was also investigated, particularly for (100) and (111)A orientations. SPV data shows a strong increase in the above band gap signal after both Streatment and dielectric film deposition, which was higher than that measured for only S-treated surfaces. PR data showed an increase in the interfacial electric field following deposition of dielectric film. The results of absolute S-surface coverage measurements using particle-induced X-ray emission measurements were correlated with the optical characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 93
Copyright
Copyright © Materials Research Society 1996

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