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Organometallic Chemical Vapor Deposition of Lead Zirconate-Titanate Thin Films

Published online by Cambridge University Press:  21 February 2011

M. De Keuser
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P.J. Van Veldhoven
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
G.J.M. Dorman
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

In this paper the growth of PbZrxTi1-xO3 on 10 cm platinized silicon wafers using the precursors cursors tetra-ethyl-lead, titanium-tetra-isopropoxide, or titanium-tetra-tertiarybutoxide and zirconium-tetra-tertiarybutoxide will be discussed in some detail. The composition of the films as a function of growth parameters will be treated and the accompanying change in the ferroelectric properties will be discussed. For device manufacturing, the PbZrxTi1-xO3 films are subjected to a number of processing steps. Some results for partially processed wafers will be presented. Also, preliminary results of depositions on 15 cm wafers will be given.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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