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Organometallic Chemical Vapor Deposition of Lead Zirconate-Titanate Thin Films

Published online by Cambridge University Press:  21 February 2011

M. De Keuser ,
P.J. Van Veldhoven  and
G.J.M. Dorman
M. De Keuser
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P.J. Van Veldhoven
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
G.J.M. Dorman
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

In this paper the growth of PbZrxTi1-xO3 on 10 cm platinized silicon wafers using the precursors cursors tetra-ethyl-lead, titanium-tetra-isopropoxide, or titanium-tetra-tertiarybutoxide and zirconium-tetra-tertiarybutoxide will be discussed in some detail. The composition of the films as a function of growth parameters will be treated and the accompanying change in the ferroelectric properties will be discussed. For device manufacturing, the PbZrxTi1-xO3 films are subjected to a number of processing steps. Some results for partially processed wafers will be presented. Also, preliminary results of depositions on 15 cm wafers will be given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 223
Copyright
Copyright © Materials Research Society 1993

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