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Organofluorosilicate Glass (OFSG): A Dense Low K Dielectric with Superior Materials Properties

Published online by Cambridge University Press:  01 February 2011

M.L. O'Neill
Affiliation:
Electronics Technology, Air Products and Chemicals, Inc.;
Y.L. Cheng
Affiliation:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan, R.O.C.; Department of Materials Science and Engineering Natl.Chiao-Tung University, Hsin-Chu, Taiwan, R.O.C.;
A.S. Lukas
Affiliation:
Electronics Technology, Air Products and Chemicals, Inc.;
Y.L. Wang
Affiliation:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan, R.O.C.; Department of Electrical Engineering National Chi-Nan University, Nan-Tou, Taiwan, R.O.C.
E.J. Karwacki
Affiliation:
Electronics Technology, Air Products and Chemicals, Inc.;
M.S. Feng
Affiliation:
Department of Materials Science and Engineering Natl.Chiao-Tung University, Hsin-Chu, Taiwan, R.O.C.;
R.N. Vrtis
Affiliation:
Electronics Technology, Air Products and Chemicals, Inc.;
J.L. Vincent
Affiliation:
Electronics Technology, Air Products and Chemicals, Inc.;
B.K. Peterson
Affiliation:
Electronics Technology, Air Products and Chemicals, Inc.;
M.D. Bitner
Affiliation:
Electronics Technology, Air Products and Chemicals, Inc.;
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Abstract

Organofluorosilicate glass (OFSG) films with the composition Si:O:C:H:F were deposited via plasma-enhanced CVD from mixtures of trimethylsilane (3MS), silicon tetrafluoride (SiF4), and oxygen (O2). OFSG films have significantly enhanced mechanical strength, thermo-oxidative stability, and adhesion compared with OSG films deposited from 3MS and O2 alone. We propose that the increased density of OFSG, which helps improve mechanical strength, is balanced by the presence on non-polarizable Si-F functionalities, which serve to lower the dielectric constant.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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