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Organic Contamination of Silicon Wafer in Clean Room Air and its Impact to Gate Oxide Integrity

Published online by Cambridge University Press:  10 February 2011

D. Imafuku ,
W. Mizubayashi ,
S. Miyazaki ,
M. Hirose ,
Y. Wakayama  and
S. Kobayashi
D. Imafuku
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
W. Mizubayashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
Y. Wakayama
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan Taisei Corporation, 344-1 Nasecho, Totsuka-ku, Yokohama 245, Japan
S. Kobayashi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan Taisei Corporation, 344-1 Nasecho, Totsuka-ku, Yokohama 245, Japan
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Abstract

Organic adsorbates on silicon wafer surfaces exposed to superclean room air were measured to evaluate organic contamination level of silicon wafers stored in a clean bench up to 180min. Such Si wafers were thermally oxidized and the dielectric degradation behavior were systematically investigated. It is found that a carbon contamination level of half a monolayer influences the charge to quasi-breakdown although the degradation mechanism itself remains unchanged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 101
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Lee, S. H., Cho, B. J., Kim, J. C. and Choi, S. H., IEDM Tech. Dig. (San Francisco, 1994) 605.Google Scholar
[2] Okada, K., Kawasaki, S. and Hirofuji, Y., Ext. Abstr. of Intern. Conf. on Solid State Devices and Materials. (Yokohama, 1994) 565.Google Scholar
[3] Yoshida, T., Miyazaki, S. and Hirose, M., Ext. Abstr. of Intern. Conf. on Solid State Devices and Materials, (Yokohama, 1996) 539.Google Scholar
[4] Sugino, R., Nakanishi, T., Takasaki, K. and Ito, T., Ext. Abstr. of Intern. Conf. on Solid State Devices and Materials, (Osaka, 1995) 920.Google Scholar
[5] Yoshida, T., Imafuku, D., Alay, J. L., Miyazaki, S. and Hirose, M., Jpn. J. Appl. Phys., 34 (1995) L903.CrossRefGoogle Scholar
[6] Depas, M., Vermeire, B., Mertens, P. W., Meuris, M. and Heyns, M. M., 1994 Symp. on VLSI Technology, Digest of Tech. Papers., (1994) 23.Google Scholar
[7] Hasegawa, E., Ishitani, A., Akimoto, K., Tsukiji, M. and Ohta, N., J. Electrochem. Soc. 142 (1995) 273.CrossRefGoogle Scholar
[8] Yoshida, T., Imafuku, D., Miyazaki, S. and Hirose, M., Proc. of 3rd Item. Symp. on Ultra Clean Processing of Silicon Surfaces (Antwerp, 1996) to be published.Google Scholar