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Optimized Ultrasharp Silicon Nanowire Geometries for Enhanced Field Ionization Properties

Published online by Cambridge University Press:  26 May 2015

Kazim Gurkan Polat ,
Chen Zhou ,
Ahmad Umar  and
M. Saif Islam
Kazim Gurkan Polat
Affiliation:
Department of Electrical and Computer Engineering, University of California - Davis, Davis, CA 95616, USA
Chen Zhou
Affiliation:
Department of Electrical and Computer Engineering, University of California - Davis, Davis, CA 95616, USA
Ahmad Umar
Affiliation:
Department of Chemistry, Najran University, Najran 11001, Saudi Arabia
M. Saif Islam
Affiliation:
Department of Electrical and Computer Engineering, University of California - Davis, Davis, CA 95616, USA
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Abstract

Silicon (Si) nanowires offer great potential for field ionization (FI) applications due to well-established Si microfabrication methods combined with favorable ionizing properties of Si. Band bending of semiconductors under applied electric fields increases the FI probability, which is not possible with metal-based counterparts. While it has been demonstrated that scaling down the active material geometry can increase the FI efficiency, maximum electric field at the tip of a single nanowire decreases by quenching effect of nearby nanowires. In this work, optimization of Si nanowire geometries for improved FI efficiencies is explored.

Keywords

Sinanoscalesimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1785: Symposium S – Semiconductor Nanowires and Devices for Advanced Applications , 2015 , pp. 7 - 11
Copyright
Copyright © Materials Research Society 2015 

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References

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