Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T07:30:12.235Z Has data issue: false hasContentIssue false

Optimization of Thermal Processing and Chemistry in the Fabrication of a PZT Based Mems Power Generator

Published online by Cambridge University Press:  01 February 2011

B.W. Olson
Affiliation:
Mechanical and Materials Engineering, Washington State University, Pullman WA 99164-2920
J.L. Skinner
Affiliation:
Mechanical and Materials Engineering, Washington State University, Pullman WA 99164-2920
C.D. Richards
Affiliation:
Mechanical and Materials Engineering, Washington State University, Pullman WA 99164-2920
R.F. Richards
Affiliation:
Mechanical and Materials Engineering, Washington State University, Pullman WA 99164-2920
D.F. Bahr
Affiliation:
Mechanical and Materials Engineering, Washington State University, Pullman WA 99164-2920
Get access

Abstract

Thin films of lead zirconate titanate (PZT) are currently being used in a novel MEMS device to generate power. A piezoelectric stack consisting of platinum/PZT/gold is deposited by sputtering, spin coating, and subsequent heat treatments onto a thin silicon membrane, which is cyclically polarized by a flexing motion. The membrane must withstand strains between 0.1% and 0.5% for several billion cycles to provide a useful device. This study has examined the processing-structure-property relationships in developing the PZT film for use in this device. In the sol-gel deposition of PZT, pyrolysis and crystallization temperatures have been shown to alter both microstructure and properties of the piezoelectric film. The chemistry of the PZT film has also been tailored to increase piezoelectric output for this device. Ferroelectric properties are compared to the piezoelectric outputs, and fatigue behavior is measured on bulk silicon and on membranes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Polla, D.L., Francis, L.F., Annu. Rev. Mater. Sci. 28, 563 (1998).Google Scholar
2. Xu, C-G., Hall, J.D., Richards, C.D., Bahr, D.F., & Richards, R.F., ASME IMECE MEMS Symposium, MEMS 2, 261 (2000).Google Scholar
3. Bahr, D.F., Bruce, K.R., Olson, B.W., Eakins, L.M., Richards, C.D., and Richards, R.F., Mat. Res. Soc. Symp. Proc. 687, B4.3 (2001).Google Scholar
4. Bahr, D.F., Crozier, B.T., Richards, C.D., and Richards, R.F., Mater. Res. Soc. Symp. Proc. 657, EE4.4.1 (2001).Google Scholar
5. Olson, B.W., Randall, L.M., Richards, C.D., Richards, R.F., and Bahr, D.F., Mat. Res. Soc. Symp. Proc. 666, F6.1.1 (2001).Google Scholar
6. Al-Shareef, H.N, Dimos, D., Tuttle, B.A., and Raymond, M.V., J. Mater. Res. 12, 347 (1997).Google Scholar
7. Yamamoto, T., Jpn. J. Appl. Phys. 35, pt. 1, 5104 (1996).Google Scholar
8. Masuda, Y., and Baba, A., Jpn. J. Appl. Phys. 35, pt. 1, 5002 (1996).Google Scholar
9. Klee, M., Eusemann, R., Waser, R., and Brand, W., J. Appl. Phys. 72, 1566 (1992).Google Scholar
10. Floquet, N., Hector, J., and Gaucher, P., J. Appl. Phys. 84, 3815 (1998).Google Scholar
11. Tuttle, B.A., Headley, T.J., Bunker, B.C., Schwartz, R.W., Zender, T.J., Hernandez, C.L., Goodnow, D.C., Tissot, R.J., Michael, J., and Carim, A.H., J. Mater. Res. 7, 1876 (1992).Google Scholar
12. Budd, K.D., Dey, S.K., and Payne, D.A., Brit. Cer. Proc. 36, 107 (1985).Google Scholar
13. Olson, A.L., Eakins, L.M., Olson, B.W., Bahr, D.F., Richards, C.D., and Richards, R.F., presented at the 2002 MRS Spring Meeting, San Francisco, CA, 2002 (unpublished).Google Scholar
14. Hall, J.D., Apperson, N.E., Crozier, B.T., Xu, C-G, Richards, R.F., Bahr, D.F., and Richards, C.D., Review of Scientific Instrumentation, in press (2002)Google Scholar
15. Hohlfelder, R. J., Ph.D. Thesis, Stanford University (1999).Google Scholar
16. Banerjee, P., MS Thesis, Washington State University (2000).Google Scholar