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Optimization of the Optical and Electrical Properties of GaN Vertical Light Emitting Diode with Current Block Layer

Published online by Cambridge University Press:  07 March 2012

Na Lu ,
Zhiqiang Liu ,
Enqing Guo ,
Liancheng Wang ,
Andrew Melton  and
Ian Ferguson
Na Lu
Affiliation:
Engineering Technology, University of North Carolina at Charlotte, Charlotte, North Carolina, 28213, USA
Zhiqiang Liu
Affiliation:
Lighting Research & Development Center, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China Electrical and Computing Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina, 28213, USA
Enqing Guo
Affiliation:
Lighting Research & Development Center, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China
Liancheng Wang
Affiliation:
Lighting Research & Development Center, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China
Andrew Melton
Affiliation:
Electrical and Computing Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina, 28213, USA
Ian Ferguson
Affiliation:
Electrical and Computing Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina, 28213, USA
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Abstract

The emission from a light emitting diode (LED) that is emitted under the metal electrode cannot escape into free space. A current blocking layer (CBL) is used to address this issue by forcing the current to flow laterally under the electrode reducing the emission absorbed and hence increasing the overall efficiency of the LED. In this paper a new method to fabricate Schottky and isolating CBLs in GaN LED are investigated. Optical and electrical measurements of these vertical LEDs with and without CBL show different light output powers at identical current densities. The results of this study indicate that CBLs could also be used to suppress the efficiency droop effect for GaN LEDs.

Keywords

nitrideIII-Vchemical vapor deposition (CVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o01-08
Copyright
Copyright © Materials Research Society 2012

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References

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