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Optimization of the Deposition Conditions for High-Gap a-Si,Ge:H,F Alloys

Published online by Cambridge University Press:  21 February 2011

P.A. Morin ,
N.W. Wang  and
S. Wagner
P.A. Morin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA
N.W. Wang
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA
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Abstract

We report the deposition parameters for optimized a-Si,Ge:H,F alloys in the range of optical (Taue) gap 1.5 leV to 1.62eV. These deposition parameters were optimized using the saturated defect density as a figure of merit. We report initial defect densities at or below 2.5×1016 cm-3, saturated defect densities below 9×1016 cm-3, photoconductivities (at G = 1021 cm-3s-1) between 8.7×10-6 Scm-1 and 7×10-5 Scm-land photosensitivities between 104 and 105 for alloys in this range of optical gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 577
Copyright
Copyright © Materials Research Society 1992

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References

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