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Optically Detected Magnetic Resonance of a Hydrogen-Related Complex Defect in Silicon

Published online by Cambridge University Press:  25 February 2011

W.M. Chen ,
O.O. Awadelkarim ,
B. Monemar ,
J.L. Lindström  and
G.S. Oehrlein
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
O.O. Awadelkarim
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
J.L. Lindström
Affiliation:
Swedish Defence Research Establishment, P.O. Box 1165, S-581 11 Linköping, SWEDEN
G.S. Oehrlein
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598 USA
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Abstract

We present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after room-temperature electron-irradiation. A spin-triplet (S=1) is shown to be the electronic state responsible for the observed ODMR spectrum. An angular dependence study of the ODMR spectrum reveals a C2v defect symmetry. The defect model is discussed in terms of a di-hydrogen-vacancy complex. The role of this defect as an efficient recombination channel (presumably non-radiative) for the non-equilibrium free carriers is also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 377
Copyright
Copyright © Materials Research Society 1990

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