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Optical Study of SiO2/nanocrystalline-Si Multilayers Using Ellipsometry

Published online by Cambridge University Press:  15 March 2011

Kang-Joo Lee
Affiliation:
Department of Physics and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
Tae-Dong Kang
Affiliation:
Department of Physics and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
Hosun Lee*
Affiliation:
Department of Physics and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
Seung Hui Hong
Affiliation:
Department of Physics and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
Suk-Ho Choi
Affiliation:
Department of Physics and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
Kyung Joong Kim
Affiliation:
Nano Surface Group, Korea Research Institute of Standards and Science, P.O.Box 102, Yusong, Taejon 305-600, Korea
Dae Won Moon
Affiliation:
Nano Surface Group, Korea Research Institute of Standards and Science, P.O.Box 102, Yusong, Taejon 305-600, Korea
*
Corresponding author: [email protected]
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Abstract

Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/SiOx multilayers (MLs). The SiO2(2nm)/SiOx(2nm) MLs have been prepared under various deposition temperature by ion beam sputtering. The annealing at temperatures ≥ 1100°C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of MLs. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentzian lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si MLs as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which was estimated from stoichiometry of SiOx.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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