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Optical Study of Localized and Delocalized States in GaAsN/GaAs

Published online by Cambridge University Press:  01 February 2011

Z. Y. Xu ,
X. D. Luo ,
X. D. Yang ,
P. H. Tan ,
C. L. Yang ,
W. K. Ge ,
Y. Zhang ,
A. Mascarenhas ,
H. P. Xin  and
C. W. Tu
Z. Y. Xu
Affiliation:
Institute of Semiconductors, CAS, Beijing, 100083, China. Email: [email protected]
X. D. Luo
Affiliation:
Institute of Semiconductors, CAS, Beijing, 100083, China. Email: [email protected]
X. D. Yang
Affiliation:
Institute of Semiconductors, CAS, Beijing, 100083, China. Email: [email protected]
P. H. Tan
Affiliation:
Institute of Semiconductors, CAS, Beijing, 100083, China. Email: [email protected]
C. L. Yang
Affiliation:
Department of Physics, Hong Kong University of Science & Technology, Hong Kong
W. K. Ge
Affiliation:
Department of Physics, Hong Kong University of Science & Technology, Hong Kong
Y. Zhang
Affiliation:
National Renewable Energy Laboratories, Tallahassee, Florida 32306
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratories, Tallahassee, Florida 32306
H. P. Xin
Affiliation:
Department of Elec. Engineering, University of California, California 92093
C. W. Tu
Affiliation:
Department of Elec. Engineering, University of California, California 92093
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Abstract

Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.68
Copyright
Copyright © Materials Research Society 2004

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References

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