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Optical Reflectometry for Detailed Modeling of Buried Layers in Silicon-on-Insulator

Published online by Cambridge University Press:  25 February 2011

S. N. Bunker ,
P. Sioshansi ,
M. M. Sanfacon  and
S. P. Tobin
S. N. Bunker
Affiliation:
Spire Corporation, Bedford, Massachusetts 01730
P. Sioshansi
Affiliation:
Spire Corporation, Bedford, Massachusetts 01730
M. M. Sanfacon
Affiliation:
Spire Corporation, Bedford, Massachusetts 01730
S. P. Tobin
Affiliation:
Spire Corporation, Bedford, Massachusetts 01730
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Abstract

Optical reflectometry has been used to describe the morphology of buried layers by high dose oxygen ion implantation into silicon. Previous work has demonstrated that the layer depth, thickness, and shape of surrounding regions with a graded concentration of oxygen can be successfully modeled when compared to SIMS and XTEM. A selection of nomographs for analyzing spectra resulting from conventional implant conditions as a function of dose and screen oxide thickness are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 391
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Hauge, P.S., “Polycrystalline Silicon Film Thickness Measurement from Analysis of Visible Reflectance Spectra,” J.Opt.Soc. Am. 69, 1143 (1979).Google Scholar
2. Bunker, S.N., Sioshansi, P., Sanfacon, M., Mogro-Campero, A., and Smith, G.A., “Analysis of Buried Layers from High Dose Oxygen Ion Implantation,” Nucl. Inst. and Meth. in Phys. Res. B. Google Scholar
3. Hubler, G.K., Malmberg, P.R., and Smith, T.P., J.Appl.Phys. 50, 7147(1979).Google Scholar
4. Bunker, S.N., Sioshansi, P., Sanfacon, M.M., and Tobin, S.P., “Nondestructive Analysis of Silicon-on-Insulator Wafers,” Appl. Phys. Lett., accepted for publication, June 1987.Google Scholar
5. Maydell-Ondrusz, E.A. and Wilson, I.H., “A Model for the Evolution of Implanted Oxygen Profiles in Silicon,” Thin Solid Films 114, 357 (1984).Google Scholar