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Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation

Published online by Cambridge University Press:  10 February 2011

C. W. White ,
S. P. Withrow ,
A. Meldrum ,
J. D. Budai ,
D. M. Hembree ,
J. G. Zhu ,
D. O. Henderson  and
S. Prawerttt
C. W. White
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
A. Meldrum
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831-6057
D. M. Hembree
Affiliation:
Oak Ridge Y-12 Plant, P. O. Box 2009, Oak Ridge, TN 37831-8244
J. G. Zhu
Affiliation:
New Mexico State University, P. O. Box 30001, Las Cruces, NM 88003
D. O. Henderson
Affiliation:
Fisk University, Nashville, TN
S. Prawerttt
Affiliation:
University of Melbourne, Parkville, Victoria, Australia
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Abstract

Si nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 249
Copyright
Copyright © Materials Research Society 1998

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References

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