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Optical Properties of Self-Organized InGaAs/GaAs Quantum Dots in Field-Effect Structures

Published online by Cambridge University Press:  09 August 2011

A. Babinski ,
T. Tomaszewicz ,
A. Wysmolek ,
J. M. Baranowski ,
C. Lobo ,
R. Leon  and
C. Jagadish
A. Babinski
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
T. Tomaszewicz
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
A. Wysmolek
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
J. M. Baranowski
Affiliation:
Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00–681 Warszawa, Poland
C. Lobo
Affiliation:
EME Dept, RSPhysSE, ANU, Canberra ACT 0200, Australia
R. Leon
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109-8099
C. Jagadish
Affiliation:
EME Dept, RSPhysSE, ANU, Canberra ACT 0200, Australia
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Abstract

The results of photoluminescence (PL) and electroreflectance (ER) measurements on InGaAs/GaAs self-organized quantum dots (QDs) in field-effect structure are presented. It has been found that the QDs PL can be completely quenched in reversely biased structure both at room temperature and at T=4.2K. A non-monotonic dependence of QDs PL peak energy with applied bias is observed at low temperature, which is attributed to the band-gap re-normalization due to QDs charging and size distribution effects. The electric field dependence of the QDs ER feature at room temperature has been analysed. A red shift of that feature with increasing electric field has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 269
Copyright
Copyright © Materials Research Society 1999

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