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Optical Properties of Pseudomorphic InxGa1−xAs Quantum Wells

Published online by Cambridge University Press:  26 February 2011

N. G. Anderson ,
Y. C. Lo  and
R. M. Kolbas
N. G. Anderson
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–7911
Y. C. Lo
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–7911
R. M. Kolbas
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–7911
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Abstract

The luminescence properties of MBE-grown pseudomorphic InxGa1−xAs—GaAs quantum-well structures are examined as a function of photoexcitation intensity and temperature. The structures examined consist of single In0.28Ga0.72As or (isolated) multiple In0.16Ga0.84As pseudomorphic wells sandwiched between thick, unstrained GaAs confining layers. Low-temperature photoluminescence spectra for these samples, which range in quantum-well thickness from 17 Å to 50 Å, consist of a single feature attributable to transitions associated with n = 1 electron and j = 3/2, Mj = 3/2 > - hole states. Spectral widths of these peaks are very narrow (7–11 meV), even for a heavily spike-doped sample (Si, ND ∼ 1018 spike-doped at well center). Emission intensities for the quantum-well structures are studied as a function of excitation intensity over the range 3 × 102 ≤ Pex ≤ 6 x 1O4 W/cm2, and one of the samples (x = 0.16, 50 Å undoped wells) prepared as a laser structure is shown to support stimulated emission at an excitation intensity < 104 W/cm2. The excellent luminescence properties of these structures are shown to degrade rapidly with increasing temperature, with radiative efficiencies dropping more than two orders of magnitude over the temperature range 20K – 180K. One possible explanation for this behavior is proposed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 437
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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