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Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells

Published online by Cambridge University Press:  22 February 2011

P. Bigenwald ,
O. Laire ,
X. Zhang ,
O. Briot ,
B. Gil ,
T. Cloitre  and
R.L. Aulombard
P. Bigenwald
Affiliation:
Université de MontpellierII-Groupe d'Etudes des Semiconducteurs Case courrier 074 -34095 MONTPELLIER CEDEX 5 -, FRANCE
O. Laire
Affiliation:
Université de MontpellierII-Groupe d'Etudes des Semiconducteurs Case courrier 074 -34095 MONTPELLIER CEDEX 5 -, FRANCE
X. Zhang
Affiliation:
Université de MontpellierII-Groupe d'Etudes des Semiconducteurs Case courrier 074 -34095 MONTPELLIER CEDEX 5 -, FRANCE
O. Briot
Affiliation:
Université de MontpellierII-Groupe d'Etudes des Semiconducteurs Case courrier 074 -34095 MONTPELLIER CEDEX 5 -, FRANCE
B. Gil
Affiliation:
Université de MontpellierII-Groupe d'Etudes des Semiconducteurs Case courrier 074 -34095 MONTPELLIER CEDEX 5 -, FRANCE
T. Cloitre
Affiliation:
Université de MontpellierII-Groupe d'Etudes des Semiconducteurs Case courrier 074 -34095 MONTPELLIER CEDEX 5 -, FRANCE
R.L. Aulombard
Affiliation:
Université de MontpellierII-Groupe d'Etudes des Semiconducteurs Case courrier 074 -34095 MONTPELLIER CEDEX 5 -, FRANCE
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Abstract

We study the optical properties of metalorganic vapour phase epitaxy (MOVPE) grown (Ga,In)As-GaAs single quantum wells as a function of the growth parameters. Our objective is to study the properties of the type II light-hole excitons with light-hole wave function delocalized in the thick GaAs layers and electrons confined in the ternary alloy. However, marked structures (like for type I excitons) are observed in the reflectivity spectra. This we interpret in the context of a novel approach of the exciton problem via a self-consistent calculation of the electron-hole interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 321
Copyright
Copyright © Materials Research Society 1994

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References

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