Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:22:03.275Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Growth Phases Formed by Rapid Thermal Annealing of MoSix thin Films on Si (100)

Published online by Cambridge University Press:  28 February 2011

G. Srinivas ,
R.S. Rastogi  and
V.D. Vankar
G. Srinivas
Affiliation:
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-110016, India
R.S. Rastogi
Affiliation:
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-110016, India
V.D. Vankar
Affiliation:
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-110016, India
Get access

Abstract

Amorphous thin films were deposited by co-sputtering Mo and Si on Si(100) single crystals. Rapid thermal annealing at 700, 800 and 1050°C for 30 sec. resulted in the growth of hexagonal and tetragonal phases of MoSi2 as revealed by glancing angle x-ray diffraction. The optical properties of these films were studied by spectroscopic ellipsometry in the range 1.0 to 5.0 eV. As deposited films showed both metallic and semiconducting features in the <ε1> and <ε2> spectra. As a result of annealing at 700 and 800°C, pronounced increase in <ε1> was obtained. Annealing at 1050°C resulted in decrease of the values of <ε2>. Surface morphology, density changes and stress variations associated with recrystallization and compound formation are proposed to account for these observations. The peaks in <ε2> spectra are found to be interband transitions in the MoSi2 structures. These results are in confirmity with the EELS and UPS studies and theoretically calculated band structure of MoSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 135
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nicolet, M.A. and Lau, S.S., in VLSI Electronic, Microstructure Science, Ed. by Einspruch, N.G. and Larrabee, G.B. (Academic N.Y. 1983) Vol.6 p. 330.Google Scholar
2. Aspenes, D.E. - J.Vac.Sci. Technol. A4, (1986) 2960.CrossRefGoogle Scholar
3. Rastogi, R.S., Vankar, V.D. and Chopra, K.L. - Rev.Sci.Instrum. 58 (1987) 1505.CrossRefGoogle Scholar
4. d'Heurle, F.M., Petersson, C.S. and Tsai, M.Y. - J.Appl.Phys. 51 (1980) 5976.CrossRefGoogle Scholar
5. Loopstra, O.B., Sloof, W.G., dekeijser, Th.H., Mittemeijer, E.J., Raddaar, S., Kuiper, A.E.T. and Wolters, R.A.M. - J.Appl.Phys. - 63 (1988) 4960.CrossRefGoogle Scholar
6. Weaver, J.H., Lynch, D.W. and Olson, C.G. - Phys.Rev.B. 10 (1974) 501.CrossRefGoogle Scholar
7. Harbeke, Gunther, in Optical Properties of Solids, Ed. by Abeles, F. North Holland, Amsterdam 1972 p. 21.Google Scholar
8. Vankar, V.D., Srinivas, G. and Rastogi, R.S. - Phys.Rev.B. (To be published).Google Scholar
9. Ged, Ph., Madar, R. and Senateur, J.P. - Phys.Rev., B.29 (1984) 6981.CrossRefGoogle Scholar
10. Ferrien, F., Viguier, C., Cros, A.. Humbert, A., Thomas, O., Madar, R. and Senateur, J.P. - Solid State Commun. 62 (1987) 455.CrossRefGoogle Scholar
11. Rastogi, R.S., Vankar, V.D., Bhatnagar, M.C. and Chopra, K.L. -J.Vac.Sci.Technol. A6 (1988) 2957.CrossRefGoogle Scholar
12. Nguyen, T.A. and Cinti, R.C. - Jour. de Physique 45 (1984) C5–435.Google Scholar
13. Nguyen, T.A., Azizan, M., Cinti, R.C., Chauvet, G. and Baptist, R. -Surf.Sci. 162 (1985) 651.CrossRefGoogle Scholar