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Optical Properties of Al0.70Ga0.30As:Er,Yb

Published online by Cambridge University Press:  11 February 2011

Shin-ichiro Uekusa ,
Isao Tanaka  and
Tomoyuki. Arai
Shin-ichiro Uekusa
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
Isao Tanaka
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
Tomoyuki. Arai
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
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Abstract

Erbium (Er) ions were co-implanted with ytterbium (Yb) into Al0.70Ga0.30As substrates and we realized an increase in the intensity of Er intra-4f-shell luminescence. The photoluminescence (PL) intensity of Er-related dominant peak (1538.2nm) was enhanced by co-implanted Yb. The thermal quenching was improved. PL intensity of Yb-related emission was decreased. We studied the transfer energy and the optical sensitization of Yb ions co-implanted with Er ions in Al0.70Ga0.30As. Energy transfers from 2F5/2 (the first excited state) → 2F7/2 (the ground state) of Yb3+ to 4I13/2 (the first excited state) → 4I15/2 (the ground state) of Er3+ were observed by PL excitation (PLE) and selectively excited PL (SPL).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.29
Copyright
Copyright © Materials Research Society 2003

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References

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