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Optical Properties and Band Offset of PbTe/Pb1−xEuxTe Diluted Magnetic Semiconductor Multiquantum Wells Studied by Transmission and Photoconductivity Measurements

Published online by Cambridge University Press:  25 February 2011

Shu Yuan ,
H. Krenn ,
G. Springholz ,
G. Bauer  and
M. Kriechbaum
Shu Yuan
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
H. Krenn
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
G. Springholz
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
M. Kriechbaum
Affiliation:
Institut für Theoretische Physik, Universität Graz, A-8010 Graz, Austria
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Abstract

From transmission experiments in the mid infrared region the optical interband transitions between electric subbands in the valence and conduction band of the PbTe wells embedded in Pb1−xEuxTe barriers (x = 2.6% to 3.0%) were determined and compared with calculations based on the envelope function approximation. The frequency dependence of the absorption constant α was calculated, taking the in-plane dispersion of the multiquantum well band structure into account. The frequency dependence of the refractive index n(ω) was derived from α(ω) using a Kramers-Kronig transformation and it exhibits several extrema which coincide with the onset of the various interband transitions. Experimentally the onset of these transitions was also observed in photoconductivity experiments. The changes in n(ω) are as large as 15 % and therefore important for the optical confinement in quantum well lasers grown with these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 615
Copyright
Copyright © Materials Research Society 1993

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References

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