Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T02:04:54.239Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Methods for Defect Characterization in Light-Ion Implanted Silicon Carbide

Published online by Cambridge University Press:  01 February 2011

Claudiu I. Muntele ,
Iulia C. Muntele ,
Daryush Ila ,
David B. Poker  and
Dale K. Hensley
Claudiu I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, P. O. Box 1447, Normal, AL -35762, U. S. A., Phone 1-256-851-5866, Fax 1-256-851-5868, Email [email protected]
Iulia C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, P. O. Box 1447, Normal, AL -35762, U. S. A., Phone 1-256-851-5866, Fax 1-256-851-5868, Email [email protected]
Daryush Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, P. O. Box 1447, Normal, AL -35762, U. S. A., Phone 1-256-851-5866, Fax 1-256-851-5868, Email [email protected]
David B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, U. S. A.
Dale K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, U. S. A.
Get access

Abstract

The work reported here deals with studying the defects induced by light ion (Al, N) implantation in 4H and 6H silicon carbide, both p-type (Al-doped) and n-type (N-doped). Confocal Micro-Raman (MR) was used for monitoring the (480 – 540) cm-1 spectral region of amorphous silicon. A broad peak forms in this region because of silicon atoms relocated as interstitials, translating into a locally stressed crystalline lattice. The locally relaxed lattice at these atoms' locations of origin also gives a broadening of the characteristic Raman peaks of each type of material. UV/Vis Optical Absorption (OA) Spectroscopy has also been employed as a good tool for dopant and carrier trapping levels embedded in the band gap of the silicon carbide material. MR and OA data collected from virgin samples, as implanted, and after annealing at two different temperatures (1100 and 1600 °C) are discussed in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.17
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Colthup, N. B., Daly, L. H., Wiberley, S. E., “Introduction to Infrared and Raman Spectroscopy”, Third Edition, Academic Press, 1990.Google Scholar
2. Kreibig, Uwe, Vollmer, Michael, “Optical Properties of Metal Clusters”, Springer-Verlag Berlin Heidelberg 1995 Google Scholar
3. Portales, H., Duval, E., Saviot, L., Fujii, M., Sumimoto, M., Hayashi, E., Phys. Rev. B, Vol. 63, 233402 Google Scholar
4. Skorupa, W., Heera, V., Pacaud, Y., Weisart, H., Nucl. Inst. Meth. B 120 (1996) 114–120 Google Scholar
5. Muntele, I. C., Ila, D., Muntele, C. I., Poker, D. B., Hensley, D. K., Mater. Res. Soc. Fall 2001 Meeting Proc., 2001 (in print).Google Scholar
6.The Stopping and Ranges of Ions in Solids, Ziegler, J. F., Biersack, J. P., Littmark, U., Pergamon Press, 1985.Google Scholar
7.Labram User Manual, ISA Dilor-Jobin Yvon, 1999.Google Scholar
8.“Raman and Luminiscence Spectroscopy for Microelectronics”, Catalogue of Optical and Physical Parameters, “Nostradamus” Project SMT4-CT-95-2024, European Commission, 1998.Google Scholar