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Optical Investigations of AlGaN on GaN Epitaxial Films

Published online by Cambridge University Press:  15 February 2011

G. Steude ,
T. Christmann ,
B.K. Meyer ,
A. Goeldner ,
A. Hoffmann ,
F. Bertram ,
J. Christen ,
H. Amano  and
I. Akasaki
G. Steude
Affiliation:
Physikalisches Institut, Universitaet Giessen, 35952 Giessen, Germany
T. Christmann
Affiliation:
Physikalisches Institut, Universitaet Giessen, 35952 Giessen, Germany
B.K. Meyer
Affiliation:
Physikalisches Institut, Universitaet Giessen, 35952 Giessen, Germany
A. Goeldner
Affiliation:
Institut für Festkoerperphysik der TU Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
A. Hoffmann
Affiliation:
Institut für Festkoerperphysik der TU Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
F. Bertram
Affiliation:
Otto von Guericke Universitaet Magdeburg, PF 4120, D-39016 Magdeburg, Germany
J. Christen
Affiliation:
Otto von Guericke Universitaet Magdeburg, PF 4120, D-39016 Magdeburg, Germany
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
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Abstract

We have investigated AlxGal-xN/GaN heterostructures (0<x<0.22) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence (PL), reflexion and cathodo-luminescence experiments. The energetic positions of the free A-exciton in GaN and AIGaN as a function of the alloy compositions are deduced from temperature dependent PL and from reflexion measurements. We obtain a small bowing parameter and no evidence for a Stokes shift between absorption and emission. The AlxGal-xN films induce additional compressive strain on the underlying GaN film. Compositional inhomogeneities are present, but the fluctuations are too small to be important for carrier localisation. The broadening of the luminescence line width in the alloy can be described by statistical disorder of a random alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.26
Copyright
Copyright © Materials Research Society 1999

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References

1 Steude, G., Hofmann, D.M., Meyer, B.K., Amano, H., and Akasaki, I., physica status solidi (b) 205, R7 (1998)Google Scholar
2 Steude, G., Hofmann, D.M., Meyer, B.K., Amano, H., and Akasaki, I., physica status solidi (a), 165, R3 (1998)Google Scholar
3 Takeuchi, T., Takeuchi, H., Soat, S., Sakai, H., Amano, H., and Akasaki, I., Jpn. J. Appl. Phys. 36, L177 (1997)Google Scholar
4 Podlowski, L., Hoffmann, A., Broser, I., J. Cryst. Growth 117, 698 (1992).Google Scholar
5 Christen, J., Grundmann, M., Bimberg, D., J. Vac. Sci. Technol. B9, 2358 (1991).Google Scholar
6 Lautenschlager, P., Garriaga, M., Logothetidis, S., and Cardona, M., Phys. Rev. B 35, 9174 (1987).Google Scholar
7 Cody, G. D., in Semiconductors and Semimetals, edited by Pankove, J.I., (Academic, New York, 1984), Vol. 21 B, pp 11–79.Google Scholar
8 Steude, G., Meyer, B.K., Hoffmann, A., Bechstedt, F. to be publishedGoogle Scholar
9 Schubert, E.F., Göbel, E.O., Horikoshi, Y., Ploog, K. and Queisser, H.J., Phys. Rev. B 30, 813 (1984)Google Scholar
10 Wickenden, D.K., Bargeron, C.B., Byrden, W.A., Miragliova, J., and Kistenmacher, T.J., Appl. Phys. Lett. 65, 2024 (1994)Google Scholar
11 McCluskey, M.D., Walle, C.G. Van de, Master, C.P., Romero, L.T., and Johnson, N.M., Appl. Phys. Lett. 72, 2725 (1998)Google Scholar