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Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

Published online by Cambridge University Press:  10 February 2011

A. Saher Helmy ,
A.C. Bryce ,
C.N. Ironside ,
J.S. Aitchison ,
J.H. Marsh  and
S.G. Ayling
A. Saher Helmy
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK, [email protected]
A.C. Bryce
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK
C.N. Ironside
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK
J.S. Aitchison
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK
J.H. Marsh
Affiliation:
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, UK
S.G. Ayling
Affiliation:
Defense Evaluation and Research Agency, St. Andrews Rd, Malvern WR14 3PS, UK
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Abstract

In this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 509
Copyright
Copyright © Materials Research Society 2000

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