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Optical, Chemical and Electrical Characterization of Ion-Etched Gallium Arsenide Surfaces

Published online by Cambridge University Press:  25 February 2011

G. F. Feng ,
M. Holtz ,
R. Zallen ,
J. M. Epp ,
J. G. Dillard ,
E. Cole ,
P. Johnson ,
S. Sen  and
L. C. Burton
G. F. Feng
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
M. Holtz
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
R. Zallen
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
J. M. Epp
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
J. G. Dillard
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
E. Cole
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
P. Johnson
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
S. Sen
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
L. C. Burton
Affiliation:
Virginia Polytechnic Institute and State University, Blacksburg, VA 14061
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Abstract

Ultraviolet reflectivity, surface chemistry and electrical measurements are reported for Ar+-ion bombarded (100) GaAs surfaces, with ion energies from 0.5 to 4 keV. Changes in reflectivity spectra, surface stoichiometry and Schottky diode parameters are reported as functions of ion energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 381
Copyright
Copyright © Materials Research Society 1987

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References

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