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Optical Characterization of Iv-VI Mid-Infrared Vcsel

Published online by Cambridge University Press:  21 March 2011

F. Zhao
Affiliation:
School of Electrical and computer Engineering 202 West Boyd, University of Oklahoma, Norman, OK 73019
H. Wu
Affiliation:
School of Electrical and computer Engineering 202 West Boyd, University of Oklahoma, Norman, OK 73019
T. Zheng
Affiliation:
School of Electrical and computer Engineering 202 West Boyd, University of Oklahoma, Norman, OK 73019
P. J. McCann
Affiliation:
School of Electrical and computer Engineering 202 West Boyd, University of Oklahoma, Norman, OK 73019
A. Majumdar
Affiliation:
School of Electrical and computer Engineering 202 West Boyd, University of Oklahoma, Norman, OK 73019
Lalith Jayasinghe
Affiliation:
School of Electrical and computer Engineering 202 West Boyd, University of Oklahoma, Norman, OK 73019
Z. Shi
Affiliation:
School of Electrical and computer Engineering 202 West Boyd, University of Oklahoma, Norman, OK 73019
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Abstract

PbSe/PbSrSe multiple-quantum-well (MQW) structures and PbSrSe thin films were grown on BaF2 (111) substrates by molecular beam epitaxy (MBE) and characterized by Fourier transform infrared (FTIR) spectrometer. Strong photoluminescence without Fabry-Perot interference fringes was observed even at room temperature from the MQW structures. The peak energies for the MQW structures with different well widths shifted to high energy with increasing temperature. The absorption edge of PbSrSe layer was determined by transmission spectra. Meanwhile, we designed and fabricated λ=4.1 μm MQW vertical cavity surface emitting laser (VCSEL). A power output of 40 mW was obtained at room temperature. The room temperature threshold pump density is 200 kW/cm2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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