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Optical Characterization of Bulk GaN Grown from a Na/Ga Flux

Published online by Cambridge University Press:  11 February 2011

K. Palle
Affiliation:
Dept of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
L. Chen
Affiliation:
Dept of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
H. X. Liu
Affiliation:
Dept of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
B. J. Skromme
Affiliation:
Dept of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
H. Yamane
Affiliation:
Institute for Advanced Materials Processing, Tohoku University, Sendai 980–8577, Japan
M. Aoki
Affiliation:
Institute for Advanced Materials Processing, Tohoku University, Sendai 980–8577, Japan
C. B. Hoffman
Affiliation:
Dept of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, 14853, U.S.A.
F. J. DiSalvo
Affiliation:
Dept of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, 14853, U.S.A.
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Abstract

Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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