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Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Nicolas Grandjean ,
Jean Massies ,
Mathieu Leroux ,
Marguerite Latigt ,
Pierre Lefebvre ,
Bernard Gil ,
Jacques Allègre  and
Pierre Bigenwald
Nicolas Grandjean
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications - CNRS Rue B. Grégory, Sophia Antipolis, F-06560 Valbonne, France.
Jean Massies
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications - CNRS Rue B. Grégory, Sophia Antipolis, F-06560 Valbonne, France.
Mathieu Leroux
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications - CNRS Rue B. Grégory, Sophia Antipolis, F-06560 Valbonne, France.
Marguerite Latigt
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications - CNRS Rue B. Grégory, Sophia Antipolis, F-06560 Valbonne, France.
Pierre Lefebvre
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case Courtier 074. 34095 Montpellier Cedex 5, France.
Bernard Gil
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case Courtier 074. 34095 Montpellier Cedex 5, France.
Jacques Allègre
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case Courtier 074. 34095 Montpellier Cedex 5, France.
Pierre Bigenwald
Affiliation:
LPM - Université d'Avignon - 33, rue Pasteur. 84000 Avignon, France.
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Abstract

AIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G11.7
Copyright
Copyright © Materials Research Society 1999

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