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Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology

Published online by Cambridge University Press:  17 March 2011

Stefan Zollner ,
Atul Konkar ,
Ran Liu ,
Himansu Yapa ,
Patricia F. Dryer ,
Victoria A. Neeley ,
Qianghua Xie ,
Galina F. Grom ,
Qingyuan Zhu  and
Rishikesh Krishnan
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Stefan Zollner
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Atul Konkar
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Ran Liu
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Himansu Yapa
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Patricia F. Dryer
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Victoria A. Neeley
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Qianghua Xie
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Galina F. Grom
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Qingyuan Zhu
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Rishikesh Krishnan
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Philippe M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Leonid V. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
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Abstract

Short-period superlattices consisting of nanocrystalline Si wells and amorphous SiO2 barriers were analyzed using various structural (transmission electron microscopy, atomic force microscopy, and x-ray diffraction) and optical (Raman scattering and spectroscopic ellipsometry) characterization techniques. We observe parallel layers containing polycrystalline Si wells, primarily with <111> orientation, and an interesting surface morphology due to sputtering damage. Raman spectra show a redshift and broadening due to finite-size effects. The ellipsometry data can be described using the effective medium approximation (since the superlattice period is much shorter than the wavelength of the optical excitation) or a superlattice approach based on the Fresnel equations with a polycrystalline Si dielectric function.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.1.1
Copyright
Copyright © Materials Research Society 2001

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References

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