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Optical and Microstructural Characterisation of InN Grown by PAMBE on (0001) Sapphire and (001) YSZ

Published online by Cambridge University Press:  01 February 2011

P. A. Anderson ,
C. E. Kendrick ,
T. E. Lee ,
W. Diehl ,
R. J. Reeves ,
V. J. Kennedy ,
A. Markwitz ,
R. J. Kinsey  and
S. M. Durbin
P. A. Anderson
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand
C. E. Kendrick
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand
T. E. Lee
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand
W. Diehl
Affiliation:
Department of Physics, University of Canterbury, Christchurch, New Zealand
R. J. Reeves
Affiliation:
Department of Physics, University of Canterbury, Christchurch, New Zealand
V. J. Kennedy
Affiliation:
Institute of Geological & Nuclear Sciences, Ltd., Lower Hutt, New Zealand
A. Markwitz
Affiliation:
Institute of Geological & Nuclear Sciences, Ltd., Lower Hutt, New Zealand
R. J. Kinsey
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand
S. M. Durbin
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand
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Abstract

InN continues to be a topic of great interest, particularly with respect to the issues surrounding its bandgap energy. To further explore this material and its properties, we have grown 200–300 nm InN films by a plasma-assisted molecular beam epitaxy (PAMBE) technique on a variety of substrates, including (0001) sapphire, (100) InAs, and both (100) and (111) YSZ. Single-crystal films regardless of quality all show the commonly reported broad luminescence feature in the range of 0.7 to 0.8 eV, although we have also observed this feature in polycrystalline films. Growth on (100) InAs and (100) YSZ was motivated by a desire to explore cubic InN; in both cases growth appears to be initially cubic, but a mixture of hexagonal and cubic phases is detected in the final layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Nanishi, Y., Saito, Y. and Yamaguchi, T., Jpn. J. Appl. Phys 42 (2003) 2549.Google Scholar
[2] Tansley, T.L. and Foley, C.P., J. Appl. Phys. 59 (1986) 3241.Google Scholar
[3] Foley, C.P. and Lyngdal, J., J. Vac. Sci. Technol. A 5 (1987) 1708.Google Scholar
[4] Seo, W.S., Jo, H.H., Lee, K. and Park, J.T., Adv. Mat. 15 (2003) 795.Google Scholar
[5] Davydov, V.Yu., Klochikhin, A.A., Seisyan, R.P, Emtsev, V.V., Ivanov, S.V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A.V., Aderhold, J., Semchinova, O. and Graul, J., Phys. Stat. Sol. (b) 229 (2001) R1.Google Scholar
[6] Davydov, V.Yu., Klochikhin, A.A., Emtsev, V.V., Kurdyukov, D.A., Ivanov, S.V., Vekshin, V.A., Bechstedt, F., Furthmüller, J., Aderhold, J., Graul, J., Mudryi, A.V., Harima, H., Hashimoto, A., Yamamoto, A., Haller, E.E., Phys. Stat. Sol. (b) 234 (2002) 787.Google Scholar
[7] Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., Kurimoto, E., Appl. Phys. Lett. 81 (2002) 1246.Google Scholar
[8] Wu, J., Walukiewicz, W., Yu, K.M., Ager, J.W. III, Haller, E.E., Lu, H., Schaff, W.J., Saito, Y. and Nanishi, Y., Appl. Phys. Lett. 80 (2002) 3967.Google Scholar
[9] Wi, S.H., Nie, X., Batyrev, I.G. and Zhang, S.B., Phys. Rev. B 67 (2003) 165209.Google Scholar
[10] Neugebauer, J. and Van de Walle, Chris G., Appl. Phys. Lett. 69 (1996) 503;Google Scholar
Kucheyev, S.O., Toth, M., Phillips, M. R., Williams, J. S., Jagadish, C., and Li, G., J. Appl. Phys. 91 (2002) 5867.Google Scholar
[11] Bechstedt, F., Furthmüller, J., Ferhat, M., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Davydov, V.Yu., Ambacher, O., Goldhahn, R., Phys. Stat. Sol. (a) 195, 628 (2003).Google Scholar
[12] Tabata, A., Lima, A. P., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Lemos, V., Schotker, B., Frey, T., Schikora, D. and Lischka, K.. Appl. Phys. Let. 74, 362 (1999), and references therein.Google Scholar
[13] Cimalla, V., Pezoldt, J., Ecke, G, Kosiba, E, Ambacher, O., Spieβ, L., Teichert, G., Lu, H. and Schaff, W. J.. Appl. Phys. Let. 83, 3468 (2003).Google Scholar