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Optical and Electrical Properties of Low to Highly-Degenerate InN Films

Published online by Cambridge University Press:  01 February 2011

D. B. Haddad ,
H. Dai ,
R. Naik ,
C. Morgan ,
V. M. Naik ,
J. S. Thakur ,
G. W. Auner ,
L. E. Wenger ,
H. Lu  and
W. J. Schaff
D. B. Haddad
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201
H. Dai
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201
R. Naik
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201
C. Morgan
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201
V. M. Naik
Affiliation:
Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, MI 48128
J. S. Thakur
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
G. W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
L. E. Wenger
Affiliation:
School of Natural Sciences and Mathematics, University of Alabama at Birmingham, Birmingham, AL 35294
H. Lu
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14583
W. J. Schaff
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14583
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Abstract

The optical and electrical properties of InN films with different levels of carrier concentrations have been investigated. Hall effect measurements at room temperature show that the InN films are n-type with carrier concentration, ne, ranging from ∼ 7 ×1017 cm-3 to ∼ 3 × 1020 cm-3 and corresponding mobility, //, of ∼ 1300 to 50 cm2V-1S-1. Optical absorption spectra of these films show a bandgap absorption edge ∼ 0.6 eV for the InN sample with the lowest ne, and 1.5 eV for the InN sample with the highest ne. However, after corrections for the degeneracy effects, all samples show an intrinsic Eg ∼ (0.60 ± 0.05) eV. Temperature dependent (5 – 600 K) electrical measurements show that ne is nearly independent of temperature below 300 K, perhaps due to the presence of donor energy levels resonating with the InN conduction band. However, all the samples show an exponential increase in ne above 300 K due to excitation of other shallow donor like sources. Mobility versus temperature graph shows a maximum ∼ 200 K for InN film with ne = 7 × 1017 cm-3 and moves towards lower temperature with increasing ne.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.7
Copyright
Copyright © Materials Research Society 2004

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References

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