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Optical and Electrical Characterizations of AlxGa1−xSb

Published online by Cambridge University Press:  25 February 2011

N. Kitamura ,
H. Yamamoto ,
K. Higuchi ,
Y. Maeda ,
A. Usami  and
T. Wada
N. Kitamura
Affiliation:
Suzuka College of Technology, Dept. of Electrical Engineering, Shiroko-cho, Suzuka 510-02, Japan
H. Yamamoto
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
K. Higuchi
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Y. Maeda
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Science, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

The LPE grown AlxGa1−xSb was investigated by means of TEM, a carrier profiler and PL. The TEM image showed the dissociated 60° dislocations and Lomer-Cottrell sessile dislocation formed by the reaction of two dissociated 60° dislocations on different {111} planes. The EPMA measurement showed that Sb concentrations at the dislocation were lower than the stoichiometric composition. The epi-layer grown at 400°C had a relatively uniform carrier concentration of ∼7×1016cm−3. The PL spectra showed five emission peaks in 0≦×≦0.29. One shallow acceptor level and two native defect levels were introduced to interpret these PL emissions. The shallow acceptor level of Ev+∼30meV may be due to the defect of VGaGaSb. The native defects introduce two levels of EΓ1 - ∼90meV and EL1 - ∼160meV. The defect levels may be related to the complex defect of the Sb vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 305
Copyright
Copyright © Materials Research Society 1987

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References

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