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Optical and Electrical Characterisation of Plasma Processed N-GaAs

Published online by Cambridge University Press:  15 February 2011

M. Murtagh ,
P. A. F. Herbert ,
P. V. Kelly  and
G. M. Crean
M. Murtagh
Affiliation:
National Microelectronics Research Centre (NMRC), Lee Maltings, Prospect Row, Cork, Ireland.
P. A. F. Herbert
Affiliation:
National Microelectronics Research Centre (NMRC), Lee Maltings, Prospect Row, Cork, Ireland.
P. V. Kelly
Affiliation:
National Microelectronics Research Centre (NMRC), Lee Maltings, Prospect Row, Cork, Ireland.
G. M. Crean
Affiliation:
National Microelectronics Research Centre (NMRC), Lee Maltings, Prospect Row, Cork, Ireland.
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Abstract

A Photoreflectance (PR), Photoluminescence (PL), Raman scattering and Ellipsometry optical characterisation study of He and SiCl4 reactive ion etched 1018cm−3 n-type GaAs is presented. Ellipsometric and PL data reveal significant modifications to the GaAs substrates for the He plasma as a function of etch power and etch gas pressure. Raman data reveal an increase in the depletion depth while the surface electric field data, extracted from PR spectra, decrease with etch severity. This is accounted for by a plasma etch induced decrease in the near surface net carrier density. Ellipsometric and PL measurements of SiCl4 etching reveal evidence of an improvement in the GaAs surface crystallinity while PR and Raman data are consistent with an increase in the surface carrier concentration. Optical characterisation data are correlated with electrical measurements using capacitance-voltage profiling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 327
Copyright
Copyright © Materials Research Society 1996

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References

[1] Stern, M. B. and Liao, P. F., J. Vac. Sci. Technol. B1 (4), Oct.–Dec. 1983, 1053.Google Scholar
[2] Crean, G. M., Little, I. and Herbert, P. A. F., Appl. Phys. Lett. 58, (1991), 511.Google Scholar
[3] Murtagh, M., Crean, G. M. and Jeynes, C., Mat. Res. Soc. Symp. Proc. Vol.324, 1994, 167.Google Scholar
[4] Murtagh, M., Kelly, P.V., Herbert, P.A. F. and Crean, G.M., Appl. Surf. Sci. 63, (1993).Google Scholar
[5] 0. Glembocki, J., Taylor, B. E. and Dobisz, E. A., J. Vac. Sci. Technol. B9 (6) 1991.Google Scholar
[6] Aspnes, D. E., Phys. Rev. Lett. 28, (1972), 168.Google Scholar
[7] Sandroff, C.J., Hedge, M.S., Farrow, L. A. and Harbison, J. P., Appl. Phys. Lett. 54, 1989.Google Scholar
[8] Sze, S. M., Physics of Semiconductor Devices, 2nd Ed. Wiley Interscience, 77, 1981.Google Scholar
[9] Hayes, W. and Loudon, R., Wiley Interscience, New York, (1978).Google Scholar