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Online Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-Ray Imaging

Published online by Cambridge University Press:  10 February 2011

P. J. Wellmann ,
M. Bickermann ,
M. Grau ,
D. Hofmann ,
T. L. Straubinger  and
A. Winnacker
P. J. Wellmann
Affiliation:
Materials Department VI, University of Erlangen, Martensstrasse 7, 91058 Erlangen, Germany, [email protected]
M. Bickermann
Affiliation:
Materials Department VI, University of Erlangen, Martensstrasse 7, 91058 Erlangen, Germany, [email protected]
M. Grau
Affiliation:
Materials Department VI, University of Erlangen, Martensstrasse 7, 91058 Erlangen, Germany, [email protected]
D. Hofmann
Affiliation:
Materials Department VI, University of Erlangen, Martensstrasse 7, 91058 Erlangen, Germany, [email protected]
T. L. Straubinger
Affiliation:
Materials Department VI, University of Erlangen, Martensstrasse 7, 91058 Erlangen, Germany, [email protected]
A. Winnacker
Affiliation:
Materials Department VI, University of Erlangen, Martensstrasse 7, 91058 Erlangen, Germany, [email protected]
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Abstract

An advanced method based on x-ray imaging is presented which allows us to visualize the ongoing processes during physical vapor transport (PVT) growth of SiC. Using a high resolution and high speed x-ray imaging detector based on image plates and digital recording we are able to follow the SiC bulk single crystal growth as well as the evolution of the SiC powder source inside the inductively heated graphite crucible on-line and quasi-continuously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 259
Copyright
Copyright © Materials Research Society 1999

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References

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