Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-19T04:19:44.645Z Has data issue: false hasContentIssue false
  • English
  • Français

On the Use of MÖssbauer Nuclei as Probes of Radiation Induced Effects at Interfaces

Published online by Cambridge University Press:  25 February 2011

P. A. Ingemarsson ,
T. Ericsson ,
G. Possnert  and
R. Wappling
P. A. Ingemarsson
Affiliation:
Dept. of Radiation Sciences, Uppsala University, Box 535, S-751 21 Uppsala, Sweden
T. Ericsson
Affiliation:
Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala, Sweden
G. Possnert
Affiliation:
The Svedberg Laboratory, Box 533, S-751 21 Uppsala, Sweden
R. Wappling
Affiliation:
Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala, Sweden
Get access

Abstract

Conversion electron M6ssbauer spectroscopy was used as a means of investigating radiation induced changes at thin film interfaces. 25 Å thick layers of 57Fe were evaporated onto substrates of Si,SiO2 and A12O3 andcovered with 150 Å 56Fe. Samples were then subjected to ion irradiation with 20 MeV C14+ to doses ranging from 1012 to 2x 1014 ions/cm2 and subsequently annealed in vacuum at 450 ºC. Mössbauer spectra were recorded before and after each step. The analysis revealed chemical alterations, induced by the ion bombardment, indicative of film-substrate bond formation and reconstruction of residual surface hydrocarbons. The results are interpreted in view of accompanying enhancements in thin film adhesion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 501
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nicolet, Marc-A., Banwell, T. C. and Paine, B. M. Mat. Res. Soc. Symp. Proc., 27, 3 (1984).CrossRefGoogle Scholar
2. Besenbacher, F., Bottiger, J., Nielsen, S. K. and Whitlow, H. J. Appl. Phys., A29, 141 (1982).CrossRefGoogle Scholar
3. Griffith, J. E., Qiu, Yuanxun and Tombrello, T. A., Nucl. Instr. Meth., 198, 607 (1982).CrossRefGoogle Scholar
4. Mendenhall, M. H., Ph.D. Thesis, California Institute of Technology, 1983.Google Scholar
5. Ogale, S. B., Joshee, Rekha, Godbole, V. P., Kanetkar, S. M. and Bhide, V. G. J. Appl. Phys. 57, 2915 (1985).CrossRefGoogle Scholar
6. Zhang, P. Q., Principi, G., Paccagnella, A., Russo, S. Lo and Battaglin, G. Nucl. Instr. Meth., B28, 561 (1987).CrossRefGoogle Scholar
7. Carbucicchio, M. and Valenti, A., Hyperfine Interactions 42, 981 (1988).CrossRefGoogle Scholar
8. Ingemarsson, P. A., Ericsson, T., Gustavsson-Seidel, A., Possnert, G., Sundqvist, B. U. R. and Wäppling, R., Application of Ion Beams in Materials Science, Edited by Sebe, T. and Yamamoto, Y., (Hosei University Press, Tokyo, 1987) pp. 323.Google Scholar
9. Ingemarsson, P. A., Ericsson, T., Possnert, G. and Wäppling, R. Accepted for publication in Hyperfme Interactions.Google Scholar
10. Hallén, A., Ingemarsson, P. A., Håkansson, P., Possnert, G. and Sundqvist, B. U. R. Accepted for publication in Nucl. Instr. Meth.Google Scholar
11. Baglin, J. E. E., Mat. Res. Soc. Symp. Proc. 41, 3 (1985).CrossRefGoogle Scholar
12. Headrick, R. L. and Seiberling, L. E., Mat. Res. Soc. Symp. Proc. 35, 539 (1985).CrossRefGoogle Scholar
13. Ingemarsson, P. Anders and Adhesion, T. A. Tombrello in Solids, Edited by Mattox, D. M., Baglin, J. E. E., Batich, C. and Gottschall, R. J., (Mater. Res. Soc. Proc., 119, Pittsburgh, PA, 1988) pp. 103 Google Scholar
14. Carbucicchio, M., Valenti, A., Battaglin, G., Mazzoldi, P. and Maschio, R. Dal Radiation Effects, 98, 21 (1986).CrossRefGoogle Scholar
15. Tombrello, T. A., Nucl. Instr. Meth., B24/25, 517 (1987).CrossRefGoogle Scholar
16. Ingemarsson, P. A., Ericsson, T., Possnert, G. and Wappling, R. Submitted to J. Adhesion Sci. Technol.Google Scholar