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On The Thermoelectric Power in Degenerate Narrow Gap Semiconductors in the Presence of a Strong Magnetic Field

Published online by Cambridge University Press:  15 February 2011

Kamakhya Prasad Ghatak  and
Badal De
Kamakhya Prasad Ghatak
Affiliation:
Deparment of Electronics Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta-700032, India
Badal De
Affiliation:
John Brown E & C Inc., 333 Ludlow Street, P.C.Box 1422, Conneeticut-06907, USA.
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Abstract

In this paper we have studied the thermoelectric power under strong magnetic field in degenerate semiconductors on the basis of fourth order in effective mass theory and taking into account the interactions of the conduction electrons, heavy-holes, light-holes and split-off holes respectively. The results obtained are then compared to those derived on the basis of the well-known three-band Kane model. It is found, taking n-Hg1-xCdxTe as an example, that the magneto-thermo power increases with decreasing electron concentration and increasing magnetic field respectively for both the models in an oscillatory way. The oscillations are due to SdH effects and the theoretical snelysis in accordance with fourth order in effective mass theory is in agreement with the experimental observation as reported elsewhere. In addition, the corresponding results for parabolic energy bands have also been obtained as special cases of our generalized foriulations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 234: Symposium V – Modern Perspectives on Thermoelectrics and Related Materials , 1991 , 59
Copyright
Copyright © Materials Research Society 1991

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References

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