Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T07:20:02.654Z Has data issue: false hasContentIssue false
  • English
  • Français

On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces

Published online by Cambridge University Press:  10 February 2011

P. Masri ,
N. Moreaud ,
M. Averous ,
Th. Stauden ,
T. Wohner  and
J. Pezoldt
P. Masri
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, UMR 5650, Université Montpellier 2, cc074, Place E. Bataillon, 34095 Montpellier cedex, France, [email protected]
N. Moreaud
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, UMR 5650, Université Montpellier 2, cc074, Place E. Bataillon, 34095 Montpellier cedex, France, [email protected]
M. Averous
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, UMR 5650, Université Montpellier 2, cc074, Place E. Bataillon, 34095 Montpellier cedex, France, [email protected]
Th. Stauden
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PSF 100565, 98684 Ilmenau, Germany
T. Wohner
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PSF 100565, 98684 Ilmenau, Germany
J. Pezoldt
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, PSF 100565, 98684 Ilmenau, Germany
Get access

Abstract

3C-SiC/Si structures with Ge incorporation are elaborated by solid source molecular beam epitaxy (SSMBE). A comparison of the flatness of the SiC-surface and the interface between SiC and Si by comparing the deposition with and without Ge is made. The results are analyzed within the framework of a theoretical approach based on the theory of elasticity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 213
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hatayama, T., Tanaka, N., Fuyuki, T., and Matsunami, H., J. Electronic Mater. 26, p. 160 (1997).10.1007/s11664-997-0143-3Google Scholar
2. Zekentes, K. and Tsagaraki, K., Mater. Sci. Eng. B56, (1999), in press 3. Mitchel, S., Spencer, M. G. and Wongchotigul, K., Mater. Sci. Forum 264–268, 231 (1998).Google Scholar
4. Masri, P., Phys. Rev. B52, 16627 (1995).10.1103/PhysRevB.52.16627Google Scholar
5. Fissel, A., Pfenninghaus, K., Kaiser, U., Kräuβlich, J., Hobert, H., Schriiter, B. and Richter, W., Mater. Sci. Forum 264–268, 255 (1998).Google Scholar
6. Pezoldt, J., Cimalla, V., Stauden, Th., Ecke, G., Eichhorn, G., Scharmann, F., Schipanski, D., Diam. Rel. Mater. 6, 1311(1997).10.1016/S0925-9635(97)00087-3Google Scholar
7 Ichikawa, T., Ino, S., Surf. Sci., 136 267(1984)10.1016/0039-6028(84)90611-3Google Scholar
8 Martensson, P., Ni, W.-X., and Hansson, G.V., Phys. Rev. B36, 5974 (1987).10.1103/PhysRevB.36.5974Google Scholar
9 Zhang, B., Northrup, J.E.,, Cohen, M.L., Surf. Sci. 145, L465 (1984).10.1016/0039-6028(84)90757-XGoogle Scholar
10 Hasegawa, S., Iwasaki, H., Li, S.-T., Nakamura, S., Phys. Rev. B32 6949 (1985).10.1103/PhysRevB.32.6949Google Scholar
11 Ruvimov, S., Bugiel, E., Osten, H.J., J. Appl. Phys. 78, 2323(1995).Google Scholar
12. See, for example, Matthews, J. W., in Epitaxial growth, Part B, Academic Press, New York, 505 (1975).Google Scholar
13. Froyen, Sverre, Wei, Su-Huai, Zunger, Alex, Phys. Rev. B38 10124 (1988).10.1103/PhysRevB.38.10124Google Scholar
14. Kittel, C., in Introduction to Solid State Physics, 3rdedn., Wiley, New York, ((1968) p. 119 Eq. (31).Google Scholar
15. Eberl, K., Iyer, S. S., Tsang, J. C., Goorsky, M. S. and Legoues, F. K., J. Vac. Sci. Technol. 110, 934(1992).10.1116/1.586092Google Scholar