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On the Moss-Burstein Shift In Quantum Confined Optoelectronic Ternary and Quaternary Materials

Published online by Cambridge University Press:  10 February 2011

Vamakhya P. Ghatak ,
P. K. Bose  and
Gautam Majumder
Vamakhya P. Ghatak
Affiliation:
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700 009, INDIA
P. K. Bose
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA.
Gautam Majumder
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA.
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Abstract

In this paper we have studied the Burstein-Moss shift in quantum wires and dots of ternary and quaternary materials on the basis of a newly formulated electron dispersion law which occurs as a consequence of heavy doping. It is found taking Hg1−xCdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples that the Burstein-Moss shift exhibits oscillatory dependences for quantum wires and dots of the said materials with respect to doping and film thickness respectively. Besides, the numerical values of the same shift is greatest in quantum dots and least in quantum wires. In addition, the theroretical analysis is in agreement with the experimental datas as given elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 679
Copyright
Copyright © Materials Research Society 1998

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