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On the Interface Structure of Buried CoSi2/Si(001) Layers and their Respective Schottky Barrier Heights

Published online by Cambridge University Press:  03 September 2012

P. Wemer ,
W. Jäger  and
A. Schüppen
P. Wemer
Affiliation:
MPL für Mikrostrukturphysik, D-06 120 Halle/Saale, Germany
W. Jäger
Affiliation:
Inst. für Feströkperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
A. Schüppen
Affiliation:
Inst. für Schicht- und Ionentechnik, Forschungszentrum J–lich, D-52425 J–lich, Germany
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Abstract

This paper describes a high-resolution transmission electron microscope (HRTEM) study of the morphology and the atomic structure of CoSi2/Si(001) interfaces of continuous buried sulicide layers. These layers were produced by high-dose Co+ ion implantation and subsequent rapid thermal annealing. Planar interface regions of high perfection with domains of different atomic interface structure, and interface steps, frequently with I 111)I facets, were observed. There were significant differences in the interface structure between the upper and lower interfaces. Measuring Schottky barrier heights (SBH's) revealed different values for the upper (0.67eV) and lower (0.78eV) CoSi2/n-Si(001) interfaces. Possible correlations between the atomic interface structures and the resulting electronic properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 227
Copyright
Copyright © Materials Research Society 1994

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References

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