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On the Compensation Mechanism of Amorphous Silicon Films: Study of Stability

Published online by Cambridge University Press:  15 February 2011

D. Caputo ,
G. De Cesare ,
F. Palma ,
M. Tucci ,
C. Minarini  and
E. Terzini
D. Caputo
Affiliation:
Department of Electronic Enginering, via Eudossiana 18, 00184 Roma (Italy)
G. De Cesare
Affiliation:
Department of Electronic Enginering, via Eudossiana 18, 00184 Roma (Italy)
F. Palma
Affiliation:
Department of Electronic Enginering, via Eudossiana 18, 00184 Roma (Italy)
M. Tucci
Affiliation:
Department of Electronic Enginering, via Eudossiana 18, 00184 Roma (Italy)
C. Minarini
Affiliation:
ENEA-CRIF, P.O. Box 32, 80055 Portici, Napoli (Italy)
E. Terzini
Affiliation:
ENEA-CRIF, P.O. Box 32, 80055 Portici, Napoli (Italy)
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Abstract

We investigated a-Si:H compensated materials deposited over a wide range of gas dopant concentrations, from 0.125 ppm up to 103 ppm.

We achieved compensation for different ratio in the gas phase of diborane and phosphine, depending on their concentration. As a relevant result, we found that at constant boron concentration compensation occurs by using two different values of phosphine flow. This behavior can be described by a change of formation mechanism involving active dopants, defects and boron-phosphorus complex, that occurs in a different way depending on the dopant concentrations.

The two compensation regimes are evidenced also by a different behavior under light soaking. Furthermore we found that photocurrent evolution under illumination is determined by two concurrent mechanisms: activation of dopant species and increase of defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 91
Copyright
Copyright © Materials Research Society 1997

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References

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