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On the Challenges and Opportunities of Sensing Materials Growth Within Production Deposition Tools

Published online by Cambridge University Press:  10 February 2011

John C. Bean ,
S. Kanakaraju  and
Mark Lau
John C. Bean
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville VA
S. Kanakaraju
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville VA
Mark Lau
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville VA
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Abstract

Scanning probe microscopy has yielded extraordinary advances in our ability to characterize surfaces at the atomic scale. These advances are paralleled by improvements in computational methods and platforms that now yield realistically complex multi-scale models of deposition processes. Combining these developments, it might now be possible to sense the dynamic state of an atomic surface, consulting with models to analyze the path of a deposition process. This real-time information might allow us to tweak the growing materials towards particularly unique and desirable final configurations. What we are largely missing are sensors that can monitor atomic scale evolution without, themselves, compromising the commercial deposition process. In a manufacturing environment, sensors cannot shadow the deposition process or contaminate the material. They cannot add significantly to the complexity of the deposition tool nor require that tool's extensive redesign. Importantly (at least over the long term) the sensors cannot even require us, that is, highly trained (and paid) individuals to operate and interpret their data!

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 27
Copyright
Copyright © Materials Research Society 2000

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References

1) In-Situ Process Control for Semiconductor Technology: A Contrast between Research and Factory Perspectives, or Observations of a Researcher Who Has Seen the Light… At Dawn… Driving the Interstate to an Out-of-State Factory, Bean, J.C., Invited Plenary Lecture, 1995 NIST Workshop, Semiconductor Characterization: Present Status and Future Needs, pp. 459-66, Bullis, W.M., Seiler, D.G. and Diebold, A.C. Eds., AIP Press, Woodbury NY, 1995 Google Scholar
2) DARPA initiative on “Virtual Integrated Prototyping”Google Scholar
3) Church, E.L., Jenkinson, H.A. and Zavada, J.M., Optical Engineering 16, 360 (1977)10.1117/12.7972054Google Scholar
4) Church, E.L., Jenkinson, H.A. and Zavada, J.M., Optical Engineering 18, 125 (1979)10.1117/12.7972337Google Scholar
5) This sample consisted of a nominally 500A thick Ge0.2Si0.8 layer grown on (100) Si by MBE at 650C.Google Scholar
6) Zhou, W., Wadley, H.G.N., Wang, D. and Bronell, D., presented at the 46th National Symposium of the Amer. Vac. Soc. (abstract book p. 140)Google Scholar
7) Celli, F.G., Beam, E.A., Files-Sesler, L.A., Liu, H.-Y. and Kao, Y.C., Appl. Phys. Lett. 62, 2705 (1993)10.1063/1.109238Google Scholar
8) Celli, F.G., Kao, Y.C., Liu, H.-Y., Fles-Sesler, L.A. and Beam, E.A., J. Vac. Sci. Technol. B11, 1014 (1993)10.1116/1.586859Google Scholar
9) Chason, E., Sinclair, M., Floro, J. A., Hunter, J.A. and Hwang, R.Q., Appl. Phys. Lett. 72, 3276 (1998)10.1063/1.121622Google Scholar
10) Gilmore, W. and Aspnes, D.E., Appl. Phys. Lett. 66, 1617 (1995)10.1063/1.113870Google Scholar
11) Murtaza, S.S., Nie, H., Campbell, J.C., Bean, J.C. and Peticolas, L.J., IEEE Photonics Technol. 8, 927 (1996)10.1109/68.502273Google Scholar
12) Huffaker, D.L., Shin, J. and Deppe, D.G., Electron. Lett. 30, 1946 (1994)10.1049/el:19941348Google Scholar
13) Kileen, K.P. and Brieland, W.G., J. Elec. Materials 23, 179 (1994)10.1007/BF02655266Google Scholar
14) Brieland, W.G. and Kileen, K.P., Mater. Res. Soc. Proc. 324, 99 (1994)10.1557/PROC-324-99Google Scholar
15) Bean, J.C., Peticolas, L.J., Lum, R. L. and McDonald, M.L., J. Vac. Sci. Technol. A, 946–51 (1996)10.1116/1.580420Google Scholar
16) Lum, R.M., McDonald, M.L., Bean, J.C., Vandenberg, J., Pernell, T.L, Chu, S.N.G., Robertson, A. and Karp, A., Appl. Phys. Lett. 69, 928–30 (1996)10.1063/1.116946Google Scholar
17) Zinck, J. J., Chow, D. H., and Schulman, J., J. Vac. Sci. Technol. B 14, 2163 (1996).10.1116/1.588890Google Scholar
18) Zinke, Jenna — private communicationGoogle Scholar
19) Aspnes, Dave — private communicationGoogle Scholar
20) Johs, Blaine et al. (J.A. Woolam Inc.) Thin Solid Films 313, 490 (1998)10.1016/S0040-6090(97)00870-5Google Scholar
21) Aspnes, D.E., J. Opt. Soc. Am. 10, 974 (1993)10.1364/JOSAA.10.000974Google Scholar
22) Maynard, H.L., Layadi, N. and Lee, J.T.C., Thin Solid Films 398 (1998)Google Scholar
23) Basa, C., Tinani, M. and Irene, E.A., J.Vac. Sci. Technol A 16 2466 (1998)10.1116/1.581368Google Scholar
24) Lee, J.-K., Sugou, S., Ren, H.-W. and Masumoto, Y., J. Vac. Sci. Technol. B17, 1341 (1999)10.1116/1.590757Google Scholar
25) Eipers-Smith, K., Waters, K. and Schultz, J.A., J. Amer. Ceram. Soc. 76, 284 (1993)10.1111/j.1151-2916.1993.tb03781.xGoogle Scholar
26) Hammond, M.S., Schultz, J.A. and Krauss, A.R., J.Vac. Sci. Technol A13, 1136 (1995)10.1116/1.579600Google Scholar
27) Information on MARLOWE can be obtained from the Oak Ridge Laboratory website: http://www.ssd.ornl.gov/Programs/MARLOWE/MARLOWEr.htmlGoogle Scholar
28) Information on SARIC can be obtained from the University of Houston at sarica surface. chem. uh. eduGoogle Scholar
29) Herman, G., Physical Review B59, 14899 (1999)10.1103/PhysRevB.59.14899Google Scholar
30) Herman, G.S., Sievers, M.R. and Gao, Y., Physical Review Letters (in press)Google Scholar
31) Luminescent P-GaAs Grown by Zinc Ion Doped MBE, Bean, J.C. and Dingle, R., Appl. Phys. Lett. 35, 925 (1979)10.1063/1.91007Google Scholar
32) Labanda, J.G.C. and Barnett, S.A., J.Vac. Sci. Technol AI5, 825 (1997).10.1116/1.580715Google Scholar