Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-20T06:42:59.224Z Has data issue: false hasContentIssue false
  • English
  • Français

On Mechanism Of Nickel Diffusion During Metal Induced Lateral Crystallization Of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

A.M. Myasnikov ,
M.C. Poon ,
P.C. Chan ,
K.L. Ng ,
M.S. Chan ,
W.Y. Chan ,
S. Singla  and
C.Y. Yuen
A.M. Myasnikov
Affiliation:
Institute of Semiconductors Physics, Novosibirsk, Russia Hong Kong University of Science and Technology, Hong Kong
M.C. Poon
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
P.C. Chan
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
K.L. Ng
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
M.S. Chan
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
W.Y. Chan
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
S. Singla
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
C.Y. Yuen
Affiliation:
Hong Kong University of Science and Technology, Hong Kong
Get access

Abstract

During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A22.11
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jagar, Singh, Chan, Mansun, Wang, Hongmei, Poon, Vincent M.C., Myasnikov, Alexandre M., Characterization of MOSFETs fabricated on large-grain polysilicon on insulator, Sol. State Electron., 45, 5, 2001, 743–749 Google Scholar
2. Chan, W.Y., Myasnikov, A.M., Poon, M.C., Yuen, C.Y., Han, P.G., Chan, M., Ko, P.K., Effect Of Nickel In Large Grain Poly-Si Film Formed By Nickel Induced Lateral Crystallization and New Grain Enhancement Method, Mat. Res. Soc. Symp. Proc. Vol. 609, 2000, A31.6 Google Scholar
3. Weber, E.R., Transition Metals In Silicon, Applied Physics, A30, 1983, 1–22 Google Scholar
4. Kuznetsov, A.Yu., Svensson, B.G., Nickel Atomic Diffusion In Amorphous Silicon, Applied Physics Letters, 66, 17, 1995, 2229–2231 Google Scholar
5. Kuznetsov, A.Yu., Svensson, B.G., Nur, O., Hultman, L., Nickel Distribution In Crystalline And Amorphous Silicon During Solid Phase Epitaxy Of Amorphous Silicon, Journal Of Applied Physics, 84, 12, 1998, 6644–6649 Google Scholar
6. Dolbak, A.E., Gavrilova, T.A., Ol'shanetsky, B.Z., Stenin, S.I., Teys, S.A., Effect Of Nickel On Clean Silicon Surfaces: Transport And Structure, Surface Science, 218, 1989, 37–54 Google Scholar
7. Dolbak, A.E., Olshanetsky, B.Z., Teys, S.A., Zhachuk, R.A., Changes In The Nature Of The Ni Diffusion Mechanism On The Si(111) Surface With Adsorption Of Co Atoms, JETP Letters, 66, 9, 1997, 643–646 Google Scholar
8. Hayzelden, C., Batstone, J.L., Silicide Formation And Silicide-Mediated Crystallization Of Nickel-Implanted Amorphous Silicon Thin Films, Journal Of Applied Physics, 73, 12, 1993, 8279–8289 Google Scholar
9. Hayzelden, C., Batstone, J.L., Cammarata, R.C., In Situ Transmission Electron Microscopy Studies Of Silicide-Mediated Crystallization Of Amorphous Silicon, Applied Physics Letters, 60, 2, 1992, 225–1227 Google Scholar