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OMVPE Growth of Materials for Red Laser Diodes

Published online by Cambridge University Press:  21 February 2011

D. P. Bour ,
D. W. Treat ,
R. D. Bringans ,
R. S. Geels  and
D. F. Welch
D. P. Bour
Affiliation:
Electronic Materials Laboratory, XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. W. Treat
Affiliation:
Electronic Materials Laboratory, XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. D. Bringans
Affiliation:
Electronic Materials Laboratory, XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. S. Geels
Affiliation:
SDL, Inc., 80 Rose Orchard Way, San Jose, CA 95134
D. F. Welch
Affiliation:
SDL, Inc., 80 Rose Orchard Way, San Jose, CA 95134
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Abstract

The properties and low pressure organometallic vapor phase epitaxy of Gaxln1-xP/(AIGa)0.5ln0.5P quantum well (QW) laser diode heterostructures with Al0.5ln0.5P cladding layers, and having wavelength 614<λ<690 nm, are described. At longer wavelengths (λ>660 nm), threshold current densities under 200 A/cm2 and efficiencies greater than 75% result from a biaxially-compressed GalnP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AIGalnP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 45
Copyright
Copyright © Materials Research Society 1994

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