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Published online by Cambridge University Press: 26 February 2011
Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Suicide formation was observed in the Pd/Si layers over the temperature range 400 – 700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × 10−6Ω;-cm2 were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling.