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Ohmic Contacts to Heavily Carbon-Doped p+-GaAs Using Ti/Si/Pd

Published online by Cambridge University Press:  26 February 2011

H. S. Lee ,
W. Y. Han ,
Y. Lu ,
M. W. Cole ,
R. T. Lareau ,
L. Casas ,
R. J. Thompson ,
A. Deanni ,
K. A. Jones  and
L. W. Yang
H. S. Lee
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703- 5601
W. Y. Han
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, New Brunswick, N.J. 08855
Y. Lu
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, New Brunswick, N.J. 08855
M. W. Cole
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703- 5601
R. T. Lareau
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703- 5601
L. Casas
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703- 5601
R. J. Thompson
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703- 5601
A. Deanni
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703- 5601
K. A. Jones
Affiliation:
Electronics Technology and Devices Laboratory, U.S. Army, Fort Monmouth, NJ 07703- 5601
L. W. Yang
Affiliation:
Ford Microelctronics, Colorado Springs, CO 80921; Current Address: General Electric Co., Electronics Laboratory, Syracuse, N.Y. 13221–4840.
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Abstract

Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Suicide formation was observed in the Pd/Si layers over the temperature range 400 – 700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × 10−6Ω;-cm2 were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 467
Copyright
Copyright © Materials Research Society 1992

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References

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