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Observations of Surfaces by Electron Microscopy During STM Operation

Published online by Cambridge University Press:  25 February 2011

J.C.H. Spence ,
U. Knipping ,
R. Norton ,
W. Lo  and
M. Kuwabara
J.C.H. Spence
Affiliation:
Dept. of PhysicsArizona State UniversityTempe AZ 85287
U. Knipping
Affiliation:
Dept. of PhysicsArizona State UniversityTempe AZ 85287
R. Norton
Affiliation:
Dept. of PhysicsArizona State UniversityTempe AZ 85287
W. Lo
Affiliation:
Dept. of PhysicsArizona State UniversityTempe AZ 85287
M. Kuwabara
Affiliation:
I.B.M. James Watson Lab. Yorktown Heights New York 10598.
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Abstract

A scanning tunnelling microscope is described which operates inside a transmission electron microscope in the reflection mode. The device is used to study the mechanism of STM contrast in graphite and semiconductors. It allows for the observation of any strain during tunnelling, using the reflection electron diffraction contrast mechanism. The first results of our new transputer-based digital imaging system for STM are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 275
Copyright
Copyright © Materials Research Society 1990

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References

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