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Observations of Dissociated High Angle Csl Boundaries in Silicon

Published online by Cambridge University Press:  26 February 2011

Anita Garg  and
W.A.T. Clark
Anita Garg
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
W.A.T. Clark
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, 116 W. 19th Avenue, Columbus, Ohio 43210
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Abstract

In a polycrystal of silicon, dissociated grain boundaries with orientations close to either the ∑=3{111}, ∑=3{112}, ∑=9{122} and ∑=27{255} coincident site lattices (CSL) were observed both optically and in the transmission electron microscope (TEM). Macroscopically ∑=3{111} and ∑=27{255} appeared stable whereas ∑=9{122} dissociated frequently into two ∑=3{111} boundaries. TEM observations revealed ∑=27{255} to dissociate into one or more triangular grains in several regions. These grains consisted of a ∑=3{111}, a ∑=9{122} and a ∑=9{111}/{115} boundary. The latter ∑=9 boundary dissociated further to form twin triangular grains. The driving forces for various dissociations are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 75
Copyright
Copyright © Materials Research Society 1988

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References

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