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Observation of the Ga Self-Interstitial Defect in GaP

Published online by Cambridge University Press:  26 February 2011

K. M. Lee
K. M. Lee*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07874
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Abstract

The first experimental evidence of an isolated self-interstitial defect in an as-grown semiconductor is reported. An optically detected magnetic resonance spectrum observed in GaP [0] was identified as arising from a Ga selfinterstitial. The large isotropic hyperfine splittings (g = 2.003 (3), A(69Ga) = 741(5)×10−4 cm−1 and A(71Ga) -941[5]×10− 4 cm−1) revealed that a single Ga atom at a Td-symmetric site is the center of the defect. The interstitial nature is established by theoretical considerations. The spin dependent recombination process is attributed to a non-radiative donor-acceptor-pair process involving the Ga++ state which is in competition with a radiative (Odeg; - A° ) pair process and an electron capture process at O-donor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 449
Copyright
Copyright © Materials Research Society 1988

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References

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